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downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 1 toshiba field effect transisto r silicon p, n channel mos ty pe (u-mos iv / u-mos iii) TPCP8403 portable equipment applications motor drive applications dc-dc converter applications ? lead(pb)-free ? low drain-source on resistance : p channel r ds (on) = 55 m ? (typ.) n channel r ds (on) = 31 m ? (typ.) ? high forward transfer admittance : p channel |y fs | = 6.0 s (typ.) n channel |y fs | = 8.6 s (typ.) ? low leakage current : p channel i dss = ? 10 a (v ds = ? 40 v) n channel i dss = 10 a (v ds = 40 v) ? enhancement mode : p channel v th = ? 0.8 to ? 2.0 v (v ds = ? 10 v, i d = ? 1ma) n channel v th = 1.3 to 2.5 v (v ds = 10 v, i d = 1ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ? 40 40 v drain-gate voltage (r gs = 20 k ) v dgr ? 40 40 v gate-source voltage v gss 20 20 v dc (note 1) i d ?3.4 4.7 drain current pulse (note 1) i dp ?13.6 18.8 a single-device operation (note 3a) p d (1) 1.48 1.48 drain power dissipation (t = 5 s) (note 2a) single-device value at dual operation (note 3b) p d (2) 1.23 1.23 single-device operation (note 3a) p d (1) 0.58 0.58 drain power dissipation (t = 5 s) (note 2b) single-device value at dual operation (note 3b) p d (2) 0.36 0.36 w single pulse avalanche energy (note 4) e as 5.5 10.6 mj avalanche current i ar ? 3.4 4.7 a repetitive avalanche energy single-device value at dual operation (note 2a, 3b, 5) e ar 0.12 mj channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: for notes 1 to 6, refer to the next page. using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. oper ating temperature/current/voltage, etc.) are within the absolute ma ximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling pr ecautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sens itive device. handle with caution. unit: mm jedec D jeita D toshiba 2-3v1g weight: 0.017 g (typ.) circuit configuration marking (note 6) 1 2 3 4 8 7 6 5 8403 1 2 3 4 8 7 6 5 lot no. 5 drain2 6 drain2 7 drain1 8 drain1 1 source1 2 gate1 3 source2 4 gate2 0.330.05 0.28 +0.1 -0.11 1.12 +0.13 -0.12 2.40.1 0.475 0.65 2.80.1 a 0.05 m 2.90.1 4 1 5 8 0.80.05 0.170.02 b b 0.05 m a s 0.025 s 1.12 +0.13 -0.12 0.28 +0.1 -0.11
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 2 thermal characteristics characteristics symbol max unit single-device operation (note 3a) r th (ch-a) (1) 84.5 thermal resistance, channel to ambient (t = 5 s) (note 2a) single-device value at dual operation (note 3b) r th (ch-a) (2) 101.6 c/w single-device operation (note 3a) r th (ch-a) (1) 215.5 thermal resistance, channel to ambient (t = 5 s) (note 2b) single-device value at dual operation (note 3b) r th (ch-a) (2) 347.2 c/w note 1: the channel temperature should not exceed 150c during use. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: a) the power dissipation and thermal resistance values shown are for a single device. (during single-device operation, power is only applied to one device.) b) the power dissipation and thermal resistance values shown are for a single device. (during dual operation, power is evenly applied to both devices.) note 4: p channel: v dd = 25 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 , i ar = ? 3.4 a n channel: v dd = 25 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 , i ar = 4.7 a note 5: repetitive rating: pulse width limited by maximum channel temperature note 6: on the lower left of the marking indicates pin 1. weekly code (3 digits): fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) (a) 25.4 25.4 -3.6 week of manufacture (01 for the first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year)
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 3 p-ch electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = ?40 v, v gs = 0 v ? ? 10 a v (br) dss i d = ?10 ma, v gs = 0 v ?40 ? ? drain-source breakdown voltage v (br) dsx i d = ?10 ma, v gs = 20 v ?25 ? ? v gate threshold voltage v th v ds = ?10 v, i d = ?1 ma ?0.8 ? ? 2.0 v v gs = ?4.5 v, i d = ?1.7 a ? 80 105 drain-source on resistance r ds (on) v gs = ?10 v, i d = ?1.7 a ? 55 70 m forward transfer admittance |y fs | v ds = ?10 v, i d = ?1.7 a 3.0 6.0 ? s input capacitance c iss ? 680 ? reverse transfer capacitance c rss ? 80 ? output capacitance c oss v ds = ?10 v, v gs = 0 v, f = 1 mhz ? 100 ? pf rise time t r ? 8.5 ? turn-on time t on ? 16 ? fall time t f ? 16 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 120 ? ns total gate charge (gate-source plus gate-drain) q g ? 15 ? gate-source charge 1 q gs1 ? 2 ? gate-drain (?miller?) charge q gd v dd ? ?32 v, v gs = ? 10 v, i d = ?3.4 a ? 3.5 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 13.6 a forward voltage (diode) v dsf i dr = ?3.4 a, v gs = 0 v ? ? 1.2 v r l = 11.8 v dd ? -20 v ?10 v 0 v 4.7 i d = -1.7a out
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 4 n-ch electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = 40 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 40 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ? 20 v 15 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.3 ? 2.5 v v gs = 4.5 v, i d = 2.4 a ? 43 60 drain-source on resistance r ds (on) v gs = 10 v, i d = 2.4 a ? 31 40 m ? forward transfer admittance |y fs | v ds = 10 v, i d = 2.4 a 4.3 8.6 ? s input capacitance c iss ? 770 ? reverse transfer capacitance c rss ? 70 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 105 ? pf rise time t r ? 8 ? turn-on time t on ? 15 ? fall time t f ? 9 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 70 ? ns total gate charge (gate-source plus gate-drain) q g ? 16 ? gate-source charge 1 q gs1 ? 2.5 ? gate-drain (?miller?) charge q gd v dd 32 v, v gs = 10 v, i d = 4.7 a ? 4 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 18.8 a forward voltage (diode) v dsf i dr = 4.7 a, v gs = 0 v ? ? ? 1.2 v r l =8.33 v dd ? 20 v 0 v v gs 10 v 4.7 i d = 2.4a out
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 5 p-ch -10 -0.1 -1 -10 -100 -100 v gs = -10 v -4.5 -1000 25 100 ta = ? 55c -0.1 -1 -10 -100 0.1 10 100 1 i d = -3.4a -0.8 0 -4 -8 -12 0 -0.8 -0.6 -0.4 -0.2 -1.0 -16 -1.7 ta = ? 55c 25 100 0 -2 -4 0 -8 -6 -16 -12 -8 -4 -10 -8 -4 -2 0 -6 0 -1 -2 -3 -4 -5 v gs = 2.4 v 2.6 3.2 3.8 3.6 4.5 3.4 10 6 5 4 2.8 3 -5 -4 -2 -1 0 -3 v gs = -2.4 v -2.6 -2.8 -3.4 -3.2 -3.8 -3 -10 -6 -4 0 -0.4 -0.8 -1.2 -1.6 -2.0 -3.6 -5 -4.5 drain current i d (a) r ds (on) ? i d drain? source on resistance r ds (on) (m ) gate? source voltage v gs (v) i d ? v gs drain current i d (a) drain? source voltage v ds (v) gate ? source voltage v gs (v) v ds ? v gs drain? source voltage v ds (v) i d ? v ds drain current i d (a) drain ? source voltage v ds (v) i d ? v ds drain current i d (a) drain current i d (a) ? y fs ? ? i d forward transfer admittance ? y fs ? (s) common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = -10 v pulse test common source ta = 25 pulse test common source v ds = ? 10 v pulse test common source tc = 25c pulse test
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 6 p-ch 0 4 8 v ds v gs 12 16 -20 0 -30 -14 -10 0 -16 -8 v dd = -32v -10 -6 -40 20 -12 -4 -8 -2 -16 -0 -1 -2 -3 -4 -80 -40 0 40 80 120 160 0.1 10 100 1000 10000 -1 -10 -100 c iss c oss c rss 0 -0.1 -1 -10 -100 0.8 v gs = 0v -5 -3 -1 -10 0.4 1.2 1.6 v gs = -10v v gs = -4.5v i d = -0.8, -1.7, -3.4a i d = -0.8, -1.7, -3.4a ? 80 160 80 40 0 120 160 ? 40 0 40 80 120 0 0.5 1.0 1.5 2.0 0 40 80 120 160 (1) (2) (3) (4) 200 drain? source voltage v ds (v) capacitance ? v ds capacitance c (pf) common source v gs = 0 v f = 1 mhz ta = 25c ambient temperature ta ( ) r ds (on) ? ta drain? source on resistance r ds (on) (m ) drain ? source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta common source v ds = -10 v i d = -1ma pulse test common source ta = 25 pulse test gate? source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) common source i d = -3.4 a ta = 25c pulse test drain power dissipation p d (w) ambient temperature ta ( ) p d ? ta device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) t = 5 s common source tc = 25c pulse test
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 7 p-ch -10 -0.1 -100 -10 -1 -100 -1 -0.1 i d max (pulse) * 10 ms * 1 ms * v dss max (1) (2) (3) (4) 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 drain? source voltage v ds (v) safe operating area drain current i d (a) r th ? t w pulse width t w (s) single pulse transient thermal impedance r th ( /w) device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) * single pulse ta = 25c curves must be derated linearly with increase in temperature.
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 8 n-ch 10 0.1 1 10 100 100 v gs = 10 v 4.5 i d = 4.7a 2.4 1.2 0 2 4 6 8 10 0 0.8 0.6 0.4 0.2 1.0 12 14 ta = ? 55c 25 100 0 2 4 0 8 6 16 12 8 4 20 20 16 8 4 0 12 0 1 2 3 4 5 v gs = 3 v 3.2 3.8 3.6 4.5 3.4 10 6 5 4 8 10 8 4 2 0 6 v gs = 2.8 v 3 3.2 3.8 3.6 4.5 3.4 10 6 5 0 0.2 0.4 0.6 0.8 1.0 4 8 drain current i d (a) r ds (on) ? i d drain? source on resistance r ds (on) (m ) gate? source voltage v gs (v) i d ? v gs drain current i d (a) drain? source voltage v ds (v) gate ? source voltage v gs (v) v ds ? v gs drain? source voltage v ds (v) i d ? v ds drain current i d (a) drain ? source voltage v ds (v) i d ? v ds drain current i d (a) drain current i d (a) ? y fs ? ? i d forward transfer admittance ? y fs ? (s) common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = 10 v pulse test common source ta = 25 pulse test common source v ds = 10 v pulse test common source tc = 25c pulse test 25 100 ta = ? 55c 0.1 1 10 100 0.1 10 100 1
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 9 n-ch 0 4 8 v ds v gs 12 16 20 0 30 14 10 0 16 8 v dd = 32v 10 6 40 20 12 4 8 2 16 0 0.5 1.0 1.5 2.0 0 40 80 120 160 (1) (2) (3) (4) 200 0 1 2 3 4 ? 80 ? 40 0 40 80 120 160 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 0 0.1 -0.2 1 10 100 -0.6 -0.8 v gs = 0,-1v 5 3 1 10 -0.4 -1 -1.2 v gs = 10v v gs = 4.5v i d = 1.2,2.4,4.7a i d = 1.2,2.4,4.7a ? 80 100 80 40 20 0 60 160 ? 40 0 40 80 120 drain? source voltage v ds (v) capacitance ? v ds capacitance c (pf) common source v gs = 0 v f = 1 mhz ta = 25c ambient temperature ta ( ) r ds (on) ? ta drain? source on resistance r ds (on) (m ) drain ? source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta common source v ds = 10 v i d = 1ma pulse test common source ta = 25 pulse test gate? source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) common source i d = 4.7 a ta = 25c pulse test drain power dissipation p d (w) ambient temperature ta ( ) p d ? ta device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) t = 5 s common source tc = 25c pulse test
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 10 n-ch 10 0.1 100 10 1 100 1 0.1 10 ms * 1 ms * v dss max (1) (2) (3) (4) 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 drain? source voltage v ds (v) safe operating area drain current i d (a) i d max (pulse) * r th ? t w pulse width t w (s) single pulse transient thermal impedance r th ( /w) device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) * single pulse ta = 25c curves must be derated linearly with increase in temperature.
downloaded from elcodis.com electronic components distributor TPCP8403 2006-11-13 11 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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